The IPB039N10N3GE8187ATMA1 is a 100V MOSFET from Infineon with a continuous drain current of 160A. It features a TO-220-3 package and can be mounted through-hole or surface mount. The device operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 214W. It is not RoHS compliant.
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Infineon IPB039N10N3GE8187ATMA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 8.41nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Through Hole, Surface Mount |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Rds On Max | 3.9mR |
| RoHS Compliant | No |
| Series | CoolMOS™ |
| RoHS | Not Compliant |
No datasheet is available for this part.
