Power Field-Effect Transistor, 80A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPB03N03LB datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPB03N03LB technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 7.624nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 2.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB03N03LB to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
