N-Channel Power MOSFET, 100V Vds, 100A continuous drain current, and 4.2mΩ Rds(on). This silicon Metal-Oxide-Semiconductor FET features a TO-263 package for surface mounting, offering a maximum power dissipation of 214W and an operating temperature range of -55°C to 175°C. It includes 1 element and 1 channel, with a gate-to-source voltage of 20V and input capacitance of 8.41nF. This component is RoHS compliant and halogen-free.
PackageTO-263
MountingSurface Mount
Power214W
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Technical Specifications
Infineon IPB042N10N3GATMA1 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 3.6mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.7mm |
| Input Capacitance | 8.41nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 4.2mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 214W |
| Radiation Hardening | No |
| Rds On Max | 4.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB042N10N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPB042N10N3GATMA1 to view detailed technical specifications.
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