The IPB042N10N3GE8187ATMA1 is a 100V power MOSFET from Infineon with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a continuous drain current of 100A and a maximum power dissipation of 214W. The device is packaged in a TO-263-3 surface mount package and is not RoHS compliant. It is part of the OptiMOS series and has a maximum Rds on of 4.2mR.
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Infineon IPB042N10N3GE8187ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.41nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 4.2mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 41ns |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon IPB042N10N3GE8187ATMA1 to view detailed technical specifications.
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