N-Channel Power MOSFET featuring 150V drain-source voltage and a low on-resistance of 0.0044 ohms. This single-element, silicon Metal-oxide Semiconductor FET offers a continuous drain current of 174A. Encased in a TO-263 D2PAK-7/6 package, it provides 6 terminals for robust connectivity.
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Technical Specifications
Infineon IPB044N15N5ATMA1 technical specifications.
General
| Number of Terminals | 6 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPB044N15N5ATMA1 Datasheet
Download the complete datasheet for Infineon IPB044N15N5ATMA1 to view detailed technical specifications.
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