This N-channel power MOSFET uses OptiMOS™ 5 technology and is rated for 150 V drain-source voltage and 120 A continuous drain current. The device specifies a maximum 4.8 mΩ on-state resistance and comes in a D2PAK (TO-263) package for high-current power switching. Infineon identifies the orderable package variant as PG-TO263-3-2 under ordering code IPB048N15N5ATMA1. Infineon lists the product as active and preferred.
Sign in to ask questions about the Infineon IPB048N15N5 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPB048N15N5 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IPB048N15N5 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
