N-channel power MOSFET featuring 150V drain-source voltage and 18A continuous drain current. This single-element silicon device offers a low on-resistance of 0.0048 ohms. Encased in a TO-263AB (D2PAK-3/2) package, it operates across a wide temperature range from -55°C to 150°C.
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Technical Specifications
Infineon IPB048N15N5LFATMA1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPB048N15N5LFATMA1 Datasheet
Download the complete datasheet for Infineon IPB048N15N5LFATMA1 to view detailed technical specifications.
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