N-channel power MOSFET featuring 150V drain-source voltage and 18A continuous drain current. This single-element silicon device offers a low on-resistance of 0.0048 ohms. Encased in a TO-263AB (D2PAK-3/2) package, it operates across a wide temperature range from -55°C to 150°C.
Infineon IPB048N15N5LFATMA1 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
No datasheet is available for this part.
