The IPB052N04NGATMA1 is a 40V N-Channel MOSFET with a continuous drain current of 70A and a gate to source voltage of 20V. It features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The device is packaged in a TO-263-3 surface mount package and is RoHS compliant. It has a maximum power dissipation of 79W and a maximum Rds on of 5.2mR.
PackageTO-263-3
MountingSurface Mount
Power79W
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Technical Specifications
Infineon IPB052N04NGATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.3nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 79W |
| Rds On Max | 5.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB052N04NGATMA1 Datasheet
Download the complete datasheet for Infineon IPB052N04NGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.