The IPB054N06N3GATMA1 is a surface mount N-channel MOSFET from Infineon with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum drain to source voltage of 60V and a continuous drain current of 80A. The device is RoHS compliant and halogen free. It has a power dissipation of 115W and a fall time of 9ns. The IPB054N06N3GATMA1 is suitable for high-power applications due to its high current handling capability and fast switching times.
MountingSurface Mount
Power115W
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Technical Specifications
Infineon IPB054N06N3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Power Dissipation | 115W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 24ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB054N06N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPB054N06N3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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