Infineon
IPB054N08N3GATMA1
Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Infineon IPB054N08N3GATMA1 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
80A
Drain to Source Voltage (Vdss)
80V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
4.75nF
Lead Free
Contains Lead
Max Dual Supply Voltage
80V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Packaging
Tape and Reel
Rds On Max
5.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OptiMOS™
Threshold Voltage
2.8V
Turn-Off Delay Time
38ns
Turn-On Delay Time
18ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPB054N08N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPB054N08N3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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