N-channel enhancement mode power MOSFET featuring OptiMOS process technology. This single-element transistor offers a maximum drain-source voltage of 60V and a continuous drain current of 45A. It is housed in a D2PAK (TO-263AA) surface-mount package with gull-wing leads, providing a low drain-source on-resistance of 5.7mOhm at 10V. The package dimensions are 10mm x 9.25mm x 4.4mm, with a seated plane height of 4.5mm and a pin pitch of 2.54mm.
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Infineon IPB057N06N technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Package Description | Double Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 9.25 |
| Package Height (mm) | 4.4 |
| Seated Plane Height (mm) | 4.5 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-263AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 45A |
| Maximum Gate Threshold Voltage | 2.8(Typ)V |
| Maximum Drain Source Resistance | 5.7@10VmOhm |
| Typical Gate Charge @ Vgs | 27@10VnC |
| Typical Gate Charge @ 10V | 27nC |
| Typical Input Capacitance @ Vds | 2000@30VpF |
| Maximum Power Dissipation | 3000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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