N-channel MOSFET, surface mount, TO-263-3 package. Features 25V drain-source breakdown voltage and 80A continuous drain current. Offers low 4.6mΩ Rds(on) and 94W maximum power dissipation. Operates from -55°C to 175°C, with fast switching times including 4.6ns fall time. RoHS compliant and lead-free.
PackageTO-263-3
Current Rating80A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon IPB05N03LAG technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 7.8R |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 4.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.11nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 94W |
| Rds On Max | 4.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB05N03LAG Datasheet
Download the complete datasheet for Infineon IPB05N03LAG to view detailed technical specifications.
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