The IPB065N03LGATMA1 is a 30V N-Channel MOSFET from Infineon with a maximum continuous drain current of 50A and on-state resistance of 6.5mR. It operates over a temperature range of -55°C to 175°C and is available in a TO-263 package. The device is RoHS compliant and features a halogen-free construction. It is suitable for high-power applications requiring low Rds On.
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Infineon IPB065N03LGATMA1 technical specifications.
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 5.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.4nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Surface Mount |
| On-State Resistance | 6.5mR |
| Package Quantity | 1000 |
| Power Dissipation | 56W |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 5.5ns |
| RoHS | Compliant |
No datasheet is available for this part.
