The IPB067N08N3GATMA1 is a surface mount N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 136W and a maximum drain to source voltage of 80V. The device has a continuous drain current of 80A and a drain to source resistance of 5.5mR. It is RoHS compliant and has a threshold voltage of 2.8V.
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Infineon IPB067N08N3GATMA1 technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.89nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Mount | Surface Mount |
| On-State Resistance | 6.7mR |
| Package Quantity | 1000 |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.8V |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 16ns |
| RoHS | Compliant |
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