N-Channel Power MOSFET, 150V drain-source voltage, 114A continuous drain current, and 0.0073 ohm on-resistance. This single-element silicon Metal-oxide Semiconductor FET features a 1-element design and is housed in a TO-263AB (D2PAK-3/2) package with two terminals.
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Technical Specifications
Infineon IPB073N15N5ATMA1 technical specifications.
General
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IPB073N15N5ATMA1 Datasheet
Download the complete datasheet for Infineon IPB073N15N5ATMA1 to view detailed technical specifications.
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