N-channel power MOSFET with 60V drain-source voltage and 50A continuous drain current. Features low on-state resistance of 8.4mΩ (typical 6.7mΩ) and a maximum power dissipation of 79W. This surface-mount device, packaged in a TO-263 (D2PAK-3) plastic housing, offers fast switching with turn-on delay of 15ns and fall time of 7ns. Operating temperature range is -55°C to 175°C.
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Infineon IPB081N06L3GATMA1 technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 6.7mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 8.4mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 79W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 15ns |
| RoHS | Compliant |
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