IPB085N06LG

Name: IPB085N06LG Infineon
Brand: Infineon
SKU: IPB085N06LG

Power Field-Effect Transistor, 80A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

PackageTO-263-3

Current Rating80A

MountingSurface Mount

PolarityN-CHANNEL

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Infineon IPB085N06LG technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	80A
Current Rating	80A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	8.5mR
Drain to Source Voltage (Vdss)	60V
Fall Time	18ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	3.5nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Mount	Surface Mount
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	188W
Rds On Max	8.2mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	53ns
DC Rated Voltage	60V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.