IPB08CNE8NG

Name: IPB08CNE8NG Infineon
Brand: Infineon
SKU: IPB08CNE8NG

Power Field-Effect Transistor, 95A I(D), 85V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

Power167W

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Infineon IPB08CNE8NG technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	95A
Drain to Source Breakdown Voltage	85V
Drain to Source Resistance	8.2mR
Drain to Source Voltage (Vdss)	85V
Fall Time	6ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	6.69nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	167W
Mount	Surface Mount
Package Quantity	1000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	167W
Rds On Max	8.2mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	26ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.