The IPB093N04LGATMA1 is a surface mount N-channel MOSFET from Infineon with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 50A and a drain to source voltage of 40V. The device is packaged in a TO-263-3 case and is RoHS compliant. It has a maximum power dissipation of 47W and a maximum Rds on of 9.3mR.
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Infineon IPB093N04LGATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.1nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 47W |
| Rds On Max | 9.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
No datasheet is available for this part.
