Infineon
IPB097N08N3G
Power Field-Effect Transistor, 70A I(D), 80V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
PackageTO-263-3
PolarityN-CHANNEL
Power100W
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Technical Specifications
Infineon IPB097N08N3G technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 9.7mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.41nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 9.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB097N08N3G Datasheet
Download the complete datasheet for Infineon IPB097N08N3G to view detailed technical specifications.
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