IPB09N03LAG

Name: IPB09N03LAG Infineon
Brand: Infineon
SKU: IPB09N03LAG

Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

PackageTO-263-3

Current Rating50A

MountingSurface Mount

PolarityN-CHANNEL

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Infineon IPB09N03LAG technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	50A
Current Rating	50A
Drain to Source Breakdown Voltage	25V
Drain to Source Voltage (Vdss)	25V
Fall Time	3.2ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.642nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	63W
Mount	Surface Mount
Package Quantity	1000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	63W
Rds On Max	8.9mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	22ns
Turn-On Delay Time	8.9ns
DC Rated Voltage	25V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.