Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Infineon IPB09N03LAG technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 3.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.642nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Rds On Max | 8.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 8.9ns |
| DC Rated Voltage | 25V |
| RoHS | Compliant |
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