The IPB100N04S2L-03 is a high-power N-channel MOSFET from Infineon, featuring a maximum drain current of 100A and a breakdown voltage of 40V. It operates within a temperature range of -55°C to 175°C and is packaged in a TO-263-3 plastic case. The device is RoHS compliant and halogen free, making it suitable for a variety of applications. With a maximum power dissipation of 300W, this MOSFET is designed to handle high-current and high-temperature conditions.
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Infineon IPB100N04S2L-03 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 6nF |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 77ns |
| Turn-On Delay Time | 19ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB100N04S2L-03 to view detailed technical specifications.
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