N-Channel Power MOSFET, 40V Drain-Source Voltage, 100A Continuous Drain Current, and 2.5mΩ Rds On. Features include 214W Power Dissipation, 175°C max operating temperature, and 9.6nF input capacitance. This silicon Metal-Oxide-Semiconductor FET is packaged in a TO-263-3, is Halogen Free, Lead Free, and RoHS Compliant.
PackageTO-263-3
PolarityN-CHANNEL
Power214W
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Technical Specifications
Infineon IPB100N04S3-03 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 9.6nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB100N04S3-03 Datasheet
Download the complete datasheet for Infineon IPB100N04S3-03 to view detailed technical specifications.
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