N-Channel Power MOSFET, 40V Drain-Source Voltage, 100A Continuous Drain Current, and 2.5mΩ Rds On. Features include 214W Power Dissipation, 175°C max operating temperature, and 9.6nF input capacitance. This silicon Metal-Oxide-Semiconductor FET is packaged in a TO-263-3, is Halogen Free, Lead Free, and RoHS Compliant.
PackageTO-263-3
PolarityN-CHANNEL
Power214W
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Technical Specifications
Infineon IPB100N04S3-03 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
9.6nF
Lead Free
Lead Free
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
214W
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
214W
Radiation Hardening
No
Rds On Max
2.5mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
46ns
Turn-On Delay Time
30ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPB100N04S3-03 Datasheet
Download the complete datasheet for Infineon IPB100N04S3-03 to view detailed technical specifications.
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