N-channel power MOSFET featuring 55V drain-source breakdown voltage and 100A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 4.7mΩ on-state resistance and 300W maximum power dissipation. Designed for high-performance applications, it operates within a temperature range of -55°C to 175°C and is packaged in a TO-263-3 surface-mount package. Halogen and lead-free, this RoHS compliant component is supplied on tape and reel.
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Infineon IPB100N06S205ATMA4 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 3.7mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.11nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| On-State Resistance | 4.7mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 4.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 59ns |
| Turn-On Delay Time | 21ns |
| RoHS | Compliant |
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