N-channel power MOSFET featuring 100A continuous drain current and 55V drain-source voltage. This single-element, silicon Metal-oxide Semiconductor Field-Effect Transistor offers a low on-resistance of 0.0056 ohms. Encased in a TO-263AB green plastic package, it is designed for high-power applications.
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Technical Specifications
Infineon IPB100N06S2L05ATMA2 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPB100N06S2L05ATMA2 Datasheet
Download the complete datasheet for Infineon IPB100N06S2L05ATMA2 to view detailed technical specifications.
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