Infineon
IPB100N06S3-03
Power Field-Effect Transistor, 100A I(D), 55V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
PackageTO-263-3
Current Rating100A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Infineon IPB100N06S3-03 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
100A
Current Rating
100A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Fall Time
60ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
21.62nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Surface Mount
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
3mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
77ns
DC Rated Voltage
55V
Compliance
RoHS
Compliant
Datasheet
Infineon IPB100N06S3-03 Datasheet
Download the complete datasheet for Infineon IPB100N06S3-03 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.