The IPB100N08S207ATMA1 is a high-power N-channel MOSFET from Infineon, featuring a maximum continuous drain current of 100A and a drain-to-source breakdown voltage of 75V. It operates within a temperature range of -55°C to 175°C and is packaged in a halogen-free TO-263-3 plastic case. The device is RoHS compliant and part of the OptiMOS series, with a maximum power dissipation of 300W and a maximum dual supply voltage of 75V.
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Infineon IPB100N08S207ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.7nF |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 6.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 61ns |
| Turn-On Delay Time | 26ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB100N08S207ATMA1 to view detailed technical specifications.
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