N-Channel Power MOSFET, 100V Vdss, 100A continuous drain current, and 4.8mR Rds On. Features a 3V threshold voltage, 11.57nF input capacitance, and fast switching times with a 20ns fall time. Operates from -55°C to 175°C with a maximum power dissipation of 300W. Packaged in a TO-263-3, this silicon metal-oxide semiconductor FET is RoHS and Halogen Free compliant.
PackageTO-263-3
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Technical Specifications
Infineon IPB100N10S3-05 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 11.57nF |
| Lead Free | Lead Free |
| Length | 10mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 4.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 34ns |
| Width | 9.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB100N10S3-05 Datasheet
Download the complete datasheet for Infineon IPB100N10S3-05 to view detailed technical specifications.
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