N-Channel Power MOSFET, 100V Vdss, 100A continuous drain current, and 4.8mR Rds On. Features a 3V threshold voltage, 11.57nF input capacitance, and fast switching times with a 20ns fall time. Operates from -55°C to 175°C with a maximum power dissipation of 300W. Packaged in a TO-263-3, this silicon metal-oxide semiconductor FET is RoHS and Halogen Free compliant.
PackageTO-263-3
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Technical Specifications
Infineon IPB100N10S3-05 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
100A
Drain to Source Voltage (Vdss)
100V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
4.4mm
Input Capacitance
11.57nF
Lead Free
Lead Free
Length
10mm
Max Dual Supply Voltage
100V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Package Quantity
1
Packaging
Tape and Reel
Rds On Max
4.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OptiMOS™
Threshold Voltage
3V
Turn-Off Delay Time
60ns
Turn-On Delay Time
34ns
Width
9.25mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPB100N10S3-05 Datasheet
Download the complete datasheet for Infineon IPB100N10S3-05 to view detailed technical specifications.
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