N-Channel Power MOSFET, 200V drain-source voltage, 88A continuous drain current, and 10.7mΩ Rds On. Features include 11ns fall time, 18ns turn-on delay, and 41ns turn-off delay. Operates from -55°C to 175°C with a 300W max power dissipation. Packaged in a TO-263-3, this silicon metal-oxide semiconductor FET is RoHS compliant and halogen-free.
PackageTO-263-3
Voltage200V
Current88A
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Technical Specifications
Infineon IPB107N20N3G technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 88A |
| Current | 88A |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 7.1nF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 10.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 18ns |
| Voltage | 200V |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB107N20N3G Datasheet
Download the complete datasheet for Infineon IPB107N20N3G to view detailed technical specifications.
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