N-channel power MOSFET featuring 200V drain-source breakdown voltage and 88A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 10.7mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 300W. Designed for surface mounting in a TO-263-3 package, it operates within a temperature range of -55°C to 175°C. Key electrical characteristics include 7.1nF input capacitance, 11ns fall time, and 41ns turn-off delay time, with a 20V gate-to-source voltage rating.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPB107N20NAATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 88A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 10.7mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.1nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 10.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 41ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB107N20NAATMA1 Datasheet
Download the complete datasheet for Infineon IPB107N20NAATMA1 to view detailed technical specifications.
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