N-Channel Power MOSFET, 150V Vdss, 83A continuous drain current, and 10.8mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-263-3 surface mount package, 214W max power dissipation, and a max operating temperature of 175°C. It offers a 3V threshold voltage, 9ns fall time, 17ns turn-on delay, and 32ns turn-off delay. Halogen-free and RoHS compliant.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Infineon IPB108N15N3GATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 83A |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.23nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Surface Mount |
| Rds On Max | 10.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB108N15N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPB108N15N3GATMA1 to view detailed technical specifications.
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