N-Channel Power MOSFET featuring 200V drain-source voltage and 11A continuous drain current. This single-element silicon device offers a low on-resistance of 0.011 ohms. Encased in a TO-263AB package, it operates across a wide temperature range from -55°C to 150°C.
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Technical Specifications
Infineon IPB110N20N3LFATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPB110N20N3LFATMA1 Datasheet
Download the complete datasheet for Infineon IPB110N20N3LFATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.