The IPB114N03LG is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 30V and a continuous drain current of 30A. The device has a maximum power dissipation of 38W and a drain to source resistance of 11.4mR. It is packaged in a TO-263-3 package and is RoHS compliant.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power38W
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Technical Specifications
Infineon IPB114N03LG technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.5nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Radiation Hardening | No |
| Rds On Max | 11.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 3.8ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB114N03LG Datasheet
Download the complete datasheet for Infineon IPB114N03LG to view detailed technical specifications.
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