N-channel power MOSFET featuring 200V drain-source breakdown voltage and 84A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 11.7mΩ on-state resistance and 300W maximum power dissipation. Designed for surface mounting in a TO-263-3 package, it operates from -55°C to 175°C and includes fast switching characteristics with an 8ns fall time.
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Infineon IPB117N20NFDATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 84A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 11.7mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.82mm |
| Input Capacitance | 6.65nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 11.7mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 11.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.068654oz |
| RoHS | Compliant |
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