Power Field-Effect Transistor, 120A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
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Infineon IPB120N04S302ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 14.3nF |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 57ns |
| Turn-On Delay Time | 35ns |
| RoHS | Compliant |
No datasheet is available for this part.
