The IPB120N04S401ATMA1 is a high-power N-channel MOSFET from Infineon, featuring a maximum continuous drain current of 120A and a drain-to-source breakdown voltage of 40V. It operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 188W. The device is packaged in a TO-263-3 package and is compliant with RoHS regulations.
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Infineon IPB120N04S401ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 14nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 1.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 34ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB120N04S401ATMA1 to view detailed technical specifications.
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