N-channel power MOSFET featuring 40V drain-source breakdown voltage and 120A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 1.8mΩ drain-source resistance and 158W maximum power dissipation. Designed for high-power applications, it operates within a temperature range of -55°C to 175°C and is packaged in a TO-263-3 surface-mount package. Key switching characteristics include a 27ns turn-on delay and 30ns fall time.
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Infineon IPB120N04S402ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1.8mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 10.74nF |
| Lead Free | Contains Lead |
| Length | 10mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 158W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 158W |
| Rds On Max | 1.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 27ns |
| Width | 9.25mm |
| RoHS | Compliant |
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