N-channel Power MOSFET featuring low on-resistance and high switching frequency capability. Designed for efficient power management applications, this device offers excellent thermal performance and robust reliability. Its advanced trench technology ensures superior conductivity and reduced switching losses, making it ideal for high-density power designs.
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Infineon IPB120P04P404ATMA2 technical specifications.
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
