Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Infineon IPB120P04P4L-03 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 11.38nF |
| Length | 10mm |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Packaging | Tape and Reel |
| Rds On Max | 3.1mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 21ns |
| Width | 9.25mm |
| RoHS | Compliant |
No datasheet is available for this part.
