P-channel MOSFET, surface mount, TO-263-3 package. Features 120A continuous drain current, -40V drain-source breakdown voltage, and 3.1mΩ max on-state resistance. Operates from -55°C to 175°C with 136W power dissipation. Includes 21ns turn-on delay and 57ns fall time.
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Infineon IPB120P04P4L03ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 2.6mR |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 4.7mm |
| Input Capacitance | 15nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 3.1mR |
| Package Quantity | 1000 |
| Packaging | Cut Tape |
| Power Dissipation | 136W |
| Rds On Max | 3.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | -1.7V |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 21ns |
| RoHS | Compliant |
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