Infineon
IPB123N10N3G
Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Infineon IPB123N10N3G technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.57mm |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 12.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 14ns |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB123N10N3G Datasheet
Download the complete datasheet for Infineon IPB123N10N3G to view detailed technical specifications.
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