Infineon
IPB123N10N3GXT
Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
PackageTO-263
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Technical Specifications
Infineon IPB123N10N3GXT technical specifications.
General
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB123N10N3GXT Datasheet
Download the complete datasheet for Infineon IPB123N10N3GXT to view detailed technical specifications.
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