The IPB12CNE8NG is a surface mount N-CHANNEL MOSFET from Infineon, featuring a maximum operating temperature range of -55°C to 175°C and a maximum power dissipation of 125W. It has a continuous drain current of 67A and a drain to source breakdown voltage of 85V. The device also has a gate to source voltage of 20V and an input capacitance of 4.34nF. It is RoHS compliant and packaged in a TO-263-3 package, available in quantities of 1000 on tape and reel.
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Infineon IPB12CNE8NG technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 67A |
| Drain to Source Breakdown Voltage | 85V |
| Drain to Source Resistance | 12.9mR |
| Drain to Source Voltage (Vdss) | 85V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.34nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 12.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 32ns |
| RoHS | Compliant |
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