N-channel power MOSFET featuring 40V drain-source breakdown voltage and 160A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 2.4mΩ drain-source resistance at 10V Vgs. Operating across a wide temperature range of -55°C to 175°C, it boasts a maximum power dissipation of 300W. Packaged in a TO-263-7, this component is supplied on tape and reel and is RoHS compliant.
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Infineon IPB160N04S203ATMA4 technical specifications.
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 2.4mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.3nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 2.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 27ns |
| RoHS | Compliant |
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