The IPB160N04S3H2ATMA1 is a 40V 160A MOSFET in a TO-263-7 package, featuring a maximum power dissipation of 214W and a maximum operating temperature of 175°C. It has a gate to source voltage of 20V and a drain to source voltage of 40V. The device is RoHS compliant and halogen free, but contains lead. It is suitable for high-power applications and has a fast switching time with a fall time of 17ns and a turn-off delay time of 46ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPB160N04S3H2ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPB160N04S3H2ATMA1 technical specifications.
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 9.6nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 2.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 30ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB160N04S3H2ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
