The IPB160N04S3H2ATMA1 is a 40V 160A MOSFET in a TO-263-7 package, featuring a maximum power dissipation of 214W and a maximum operating temperature of 175°C. It has a gate to source voltage of 20V and a drain to source voltage of 40V. The device is RoHS compliant and halogen free, but contains lead. It is suitable for high-power applications and has a fast switching time with a fall time of 17ns and a turn-off delay time of 46ns.
PackageTO-263-7
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Technical Specifications
Infineon IPB160N04S3H2ATMA1 technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 9.6nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 2.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB160N04S3H2ATMA1 Datasheet
Download the complete datasheet for Infineon IPB160N04S3H2ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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