Infineon
IPB160N04S4-02D
Power Field-Effect Transistor, 160A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7
PackageTO-263-7
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Technical Specifications
Infineon IPB160N04S4-02D technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Rds On Max | 1.9mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 16ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB160N04S4-02D Datasheet
Download the complete datasheet for Infineon IPB160N04S4-02D to view detailed technical specifications.
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