N-channel power MOSFET featuring 160A continuous drain current and 40V drain-to-source breakdown voltage. Offers a low 1.6mΩ drain-to-source resistance (Rds On Max) and 167W maximum power dissipation. Designed for surface mounting in a TO-263-7 package, this silicon Metal-Oxide Semiconductor FET operates from -55°C to 175°C. Key switching characteristics include a 33ns fall time, 28ns turn-on delay, and 29ns turn-off delay. RoHS compliant and halogen-free.
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Infineon IPB160N04S4H1ATMA1 technical specifications.
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1.6mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 10.92nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 167W |
| Rds On Max | 1.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 28ns |
| RoHS | Compliant |
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