53 A 100 V 0.0165 Ohm N-channel Si Power Mosfet TO-263AB
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Infineon IPB16CN10NG technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 16.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.22nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 16.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 27ns |
| RoHS | Compliant |
No datasheet is available for this part.
