The IPB17N25S3100ATMA1 is a surface mount MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 107W and a maximum drain to source voltage of 250V. The device is packaged in a TO-263-3 case and is RoHS compliant. It has a maximum continuous drain current of 17A and a maximum gate to source voltage of 20V. The MOSFET has a fall time of 1.2ns and a turn-off delay time of 7.5ns, with a turn-on delay time of 4.4ns.
PackageTO-263-3
MountingSurface Mount
Power107W
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Technical Specifications
Infineon IPB17N25S3100ATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 1.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.5nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 250V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 107W |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 7.5ns |
| Turn-On Delay Time | 4.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB17N25S3100ATMA1 Datasheet
Download the complete datasheet for Infineon IPB17N25S3100ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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