Infineon
IPB180N03S4L01ATMA1
Power Field-Effect Transistor, 180A I(D), 30V, 0.00105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
PackageTO-263-7
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Technical Specifications
Infineon IPB180N03S4L01ATMA1 technical specifications.
General
Package/Case
TO-263-7
Continuous Drain Current (ID)
180A
Drain to Source Voltage (Vdss)
30V
Fall Time
23ns
Gate to Source Voltage (Vgs)
16V
Halogen Free
Halogen Free
Input Capacitance
17.6nF
Max Dual Supply Voltage
30V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
188W
Package Quantity
1000
Packaging
Tape and Reel
Rds On Max
15mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
57ns
Turn-On Delay Time
8ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPB180N03S4L01ATMA1 Datasheet
Download the complete datasheet for Infineon IPB180N03S4L01ATMA1 to view detailed technical specifications.
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